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日立能源ABB PCT晶闸管5STP 34N5200
Phase Control Thyristor5STP 34N5200Phase Control Thyristor5STP 34N5200VDRM = 5200 VIT(AV)M = 3450 AIT(RMS) = 5420 AITSM = 63.0·103 AVT0 = 0.96 VrT = 0.194 mΩ• Patented free-floating silicon technol
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2025-07-28 |
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日立能源ABB PCT晶闸管5STP 25M5200
Phase Control Thyristor5STP 25M5200VDRM = 5200 VIT(AV)M = 2400 AIT(RMS) = 3770 AITSM = 50.5·103 AVT0 = 0.990 VrT = 0.237 mΩ· Patented free-floating silicon technology· Low on-state and switching l
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2025-07-25 |
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日立能源ABB PCT晶闸管5STP 25L5200
Phase Control Thyristor5STP 25L5200VDRM = 5200 VIT(AV)M = 2830 AIT(RMS) = 4450 AITSM = 50.5·103 AVT0 = 0.990 VrT = 0.237 mΩ· Patented free-floating silicon technology· Low on-state and switching l
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2025-07-24 |
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日立能源ABB PCT二极管5STP 17H5200
Phase Control Thyristor5STP 17H5200VDRM = 5200 VIT(AV)M = 1970 AIT(RMS) = 3090 AITSM = 34.0·103 AVT0 = 0.994 VrT = 0.343 mΩ· Patented free-floating silicon technology· Low on-state and switching l
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2025-07-23 |
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日立能源ABB PCT二极管5STP 04D5200
Phase Control Thyristor5STP 04D5200VDRM = 5200 VIT(AV)M = 420 AIT(RMS) = 650 AITSM = 6.1·103 AVT0 = 1.29 VrT = 1.917 mΩDoc. No. 5SYA1026-08 May. 20• Patented free-floating silicon technology• Low
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2025-07-22 |
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日立能源ABB PCT二极管5STP 38Q4200
Phase Control Thyristor5STP 38Q4200VDRM=4200 VIT(AV)M=4420 AIT(RMS)=6950 AITSM= 64.5·103AVT0=0.973 VrT=0.126 mW
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2025-07-21 |
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日立能源ABB PCT二极管5STP 38N4200
Phase Control Thyristor5STP 38N4200VDRM=4200 VIT(AV)M=4090 AIT(RMS)=6420 AITSM= 64.5·103AVT0=0.973 VrT=0.126 m
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2025-07-18 |
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日立能源ABB PCT二极管5STP 28L4200
Phase Control Thyristor5STP 28L4200VDRM=4200 VIT(AV)M=3290 AIT(RMS)=5160 AITSM= 54.0·103AVT0=1.03 VrT=0.138 mW
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2025-07-17 |
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