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ABB PCT晶闸管5STP 03D6500
5STP 03D6500Phase control thyristor• VDRM, VRRM = 6500 V• ITAVm = 390 A• ITSM = 4700 A• VT0 = 1.200 V• rT = 2.300 mΩ• Patented free-floating silicon technology• Low on-state losses• Designed
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2025-02-19 |
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ABB PCT晶闸管5STP 52U5200
Phase Control Thyristor5STP 52U5200VDRM = 5200 VIT(AV)M = 5200 AIT(RMS) = 8170 AITSM = 99.0·103 AVT0 = 1.04 VrT = 0.115 mΩ• Patented free-floating silicon technology• Low on-state and switching lo
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2025-02-19 |
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ABB PCT晶闸管5STP 34Q5200
Phase Control Thyristor5STP 34Q5200VDRM = 5200 VIT(AV)M = 3720 AIT(RMS) = 5840 AITSM = 63.0·103 AVT0 = 0.96 VrT = 0.194 mΩDoc. No. 5SYA1052-07 Apr. 20· Patented free-floating silicon technology· L
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2025-02-18 |
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ABB PCT晶闸管5STP 34N5200
Phase Control Thyristor5STP 34N5200Phase Control Thyristor5STP 34N5200VDRM = 5200 VIT(AV)M = 3450 AIT(RMS) = 5420 AITSM = 63.0·103 AVT0 = 0.96 VrT = 0.194 mΩ• Patented free-floating silicon technol
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2025-02-18 |
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ABB PCT晶闸管5STP 25M5200
Phase Control Thyristor5STP 25M5200VDRM = 5200 VIT(AV)M = 2400 AIT(RMS) = 3770 AITSM = 50.5·103 AVT0 = 0.990 VrT = 0.237 mΩ· Patented free-floating silicon technology· Low on-state and switching l
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2025-02-17 |
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ABB PCT晶闸管5STP 25L5200
Phase Control Thyristor5STP 25L5200VDRM = 5200 VIT(AV)M = 2830 AIT(RMS) = 4450 AITSM = 50.5·103 AVT0 = 0.990 VrT = 0.237 mΩ· Patented free-floating silicon technology· Low on-state and switching l
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2025-02-17 |
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ABB PCT二极管5STP 17H5200
Phase Control Thyristor5STP 17H5200VDRM = 5200 VIT(AV)M = 1970 AIT(RMS) = 3090 AITSM = 34.0·103 AVT0 = 0.994 VrT = 0.343 mΩ· Patented free-floating silicon technology· Low on-state and switching l
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2025-02-17 |
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