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日立能源ABB PCT晶闸管5STP 27N8500
Phase Control Thyristor5STP 27N8500VDRM=8500 VIT(AV)M=2660 AIT(RMS)=4180 AITSM= 64.0·103AVT0=1.13 VrT=0.394 m•Patented free-floating silicon technology•Low on-state and switching losses•Designed
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2025-08-12 |
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日立能源ABB PCT晶闸管5STP 42U6500
Phase Control Thyristor5STP 42U6500VDRM = 6500 VIT(AV)M = 4300 AIT(RMS) = 6750 AITSM = 86.0·103 AVT0 = 1.17 VrT = 0.181 mΩ· Patented free-floating silicon technology· Low on-state and switching lo
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2025-08-11 |
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日立能源ABB PCT晶闸管5STP 26N6500
Phase Control Thyristor5STP 26N6500VDRM = 6500 VIT(AV)M = 2880 AIT(RMS) = 4520 AITSM = 65.0·103 AVT0 = 1.12 VrT = 0.290 mΩ· Patented free-floating silicon technology· Low on-state and switching lo
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2025-08-08 |
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日立能源ABB PCT晶闸管5STP 18M6500
Phase Control Thyristor5STP 18M6500VDRM = 6500 VIT(AV)M = 1830 AIT(RMS) = 2870 AITSM = 47.5·103 AVT0 = 1.21 VrT = 0.431 mΩ· Patented free-floating silicon technology· Low on-state and switching lo
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2025-08-07 |
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日历能源ABB PCT晶闸管5STP 08G6500
Phase Control Thyristor5STP 08G6500VDRM = 6500 VIT(AV)M = 730 AIT(RMS) = 1150 AITSM = 15.1·103 AVT0 = 1.20 VrT = 1.046 mΩ· Patented free-floating silicon technology· Low on-state and switching los
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2025-08-06 |
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日立能源ABB PCT晶闸管5STP 03X6500
Phase Control Thyristor5STP 03X6500VDRM = 6500 VIT(AV)M = 340 AIT(RMS) = 540 AITSM = 4.7·103 AVT0 = 1.20 VrT = 2.30 mΩ· Patented free-floating silicon technology· Low on-state and switching losses
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2025-07-31 |
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日立能源ABB PCT晶闸管5STP 52U5200
Phase Control Thyristor5STP 52U5200VDRM = 5200 VIT(AV)M = 5200 AIT(RMS) = 8170 AITSM = 99.0·103 AVT0 = 1.04 VrT = 0.115 mΩ• Patented free-floating silicon technology• Low on-state and switching lo
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2025-07-30 |
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日立能源ABB PCT晶闸管5STP 34Q5200
Phase Control Thyristor5STP 34Q5200VDRM = 5200 VIT(AV)M = 3720 AIT(RMS) = 5840 AITSM = 63.0·103 AVT0 = 0.96 VrT = 0.194 mΩDoc. No. 5SYA1052-07 Apr. 20· Patented free-floating silicon technology· L
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2025-07-29 |
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