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武汉科美芯电气有限公司

日立ABB IGBT模块,PNJ(派恩杰)碳化硅分立器件及模块,Lite-On(光宝)光耦驱动...

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日立能源ABB PCT晶闸管 5STP 45Y8500
hase Control Thyristor5STP 45Y8500VDRM=8500 VIT(AV)M=4450 AIT(RMS)=6990 AITSM= 90.0·103AVT0=1.06 VrT=0.168 mPatented free-floating silicon technologyLow on-state and switching lossesDesigned
2026-01-09
日立能源ABB PCT晶闸管 5STP 27Q8500
Phase Control Thyristor5STP 27Q8500VDRM = 8500 VIT(AV)M = 2870 AIT(RMS) = 4510 AITSM = 64.0·103 AVT0 = 1.13 VrT = 0.394 mΩ• Patented free-floating silicon technology• Low on-state and switching lo
2026-01-08
日立能源ABB PCT晶闸管 5STP 27N8500
Phase Control Thyristor5STP 27N8500VDRM=8500 VIT(AV)M=2660 AIT(RMS)=4180 AITSM= 64.0·103AVT0=1.13 VrT=0.394 m•Patented free-floating silicon technology•Low on-state and switching losses•Designed
2026-01-07
日立能源ABB PCT晶闸管5STP 48Y7200
Phase Control Thyristor5STP 48Y7200VDRM = 7200 VIT(AV)M = 5040 AIT(RMS) = 7910 AITSM = 92.0·103 AVT0 = 0.983 VrT = 0.128 mΩ· Patented free-floating silicon technology· Low on-state and switching l
2026-01-06
日立能源ABB PCT晶闸管 5STP 42U6500
Phase Control Thyristor5STP 42U6500VDRM = 6500 VIT(AV)M = 4300 AIT(RMS) = 6750 AITSM = 86.0·103 AVT0 = 1.17 VrT = 0.181 mΩ· Patented free-floating silicon technology· Low on-state and switching lo
2026-01-05
日立能源ABB PCT晶闸管 5STP 40x6500
5STP 40x6500Phase Control Thyristor·VDRM = 6500 V·ITM = 3780 A·IT(RMS) = 5930 A·ITSM = 65.0·103 A·VT0 = 1.14 V·rT = 0.259 mΩHigh forward and surge current ratingLow on-state and switching loss
2026-01-04
日立能源ABB PCT晶闸管 5STP 26N6500
Phase Control Thyristor5STP 26N6500VDRM = 6500 VIT(AV)M = 2880 AIT(RMS) = 4520 AITSM = 65.0·103 AVT0 = 1.12 VrT = 0.290 mΩ· Patented free-floating silicon technology· Low on-state and switching lo
2025-12-30
日立能源ABB PCT晶闸管 5STP 18M6500
Phase Control Thyristor5STP 18M6500VDRM = 6500 VIT(AV)M = 1830 AIT(RMS) = 2870 AITSM = 47.5·103 AVT0 = 1.21 VrT = 0.431 mΩ· Patented free-floating silicon technology· Low on-state and switching lo
2025-12-29